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IRF7501PBF

International Rectifier
Part Number IRF7501PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 23, 2013
Detailed Description PD - 95345A IRF7501PbF HEXFET® Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Ch...
Datasheet PDF File IRF7501PBF PDF File

IRF7501PBF
IRF7501PBF

Overview
PD - 95345A IRF7501PbF HEXFET® Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.
1mm) Available in Tape & Reel Fast Switching Lead-Free S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS =20V RDS(on) = 0.
135Ω 6 5 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.
This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.
1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGSM VGS dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation„ Maximum Power Dissipation „ Linear Derating Factor Gate-to-Source Voltage Single Pulse tp<10μs Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
20 2.
4 1.
9 19 1.
25 0.
8 0.
01 16 ± 12 5.
0 -55 to + 150 240 (1.
6mm from case) Units V A W W W/°C V V V/ns °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient „ Max.
100 Units °C/W www.
irf.
com All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later...


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