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AUIRF8736M2TR

International Rectifier
Part Number AUIRF8736M2TR
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 24, 2013
Detailed Description   AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET® Power MOSFET            Advanced Process...
Datasheet PDF File AUIRF8736M2TR PDF File

AUIRF8736M2TR
AUIRF8736M2TR

Overview
  AUTOMOTIVE GRADE AUIRF8736M2TR Automotive DirectFET® Power MOSFET            Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * V(BR)DSS RDS(on) typ.
max.
ID (Silicon Limited) Qg          40V 1.
3m 1.
9m 137A 136nC   Applicable DirectFET® Outline and Substrate Outline  SB Description SC M2 M4 M4 DirectFET® ISOMETRIC L4 L6 L8 The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.
7mm profile.
The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value.
The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms.
This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area.
Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability.
These features combine to make this MOSFET a highly efficient, robust and reliab...


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