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2SA1302

Inchange Semiconductor
Part Number 2SA1302
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Oct 24, 2013
Detailed Description INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION ·High Current ...
Datasheet PDF File 2SA1302 PDF File

2SA1302
2SA1302


Overview
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.
5 A PC 150 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn Free Datasheet http://www.
datasheet4u.
com/ INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1302 TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.
0 V VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V -1.
5 V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -8A ; VCE= -5V 35 COB Output Capacitance IE= 0;VCB= -10V;ftest= 1.
0MHz 470 pF fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -5V 25 MHz ‹ hFE-1 Classifications R 55-110 O 80-160 isc Website：www.
iscsemi.
cn 2 Free Datasheet http://www.
datasheet4u.
com/ ...


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