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2SA1365

Kexin
Part Number 2SA1365
Manufacturer Kexin
Description Transistors
Published Oct 24, 2013
Detailed Description SMD Type Silicon PNP Epitaxia 2SA1365 SOT-23 Transistors IC Unit: mm Features Low collector to emitter saturation vol...
Datasheet PDF File 2SA1365 PDF File

2SA1365
2SA1365


Overview
SMD Type Silicon PNP Epitaxia 2SA1365 SOT-23 Transistors IC Unit: mm Features Low collector to emitter saturation voltage.
+0.
1 2.
4-0.
1 +0.
1 2.
9-0.
1 +0.
1 0.
4-0.
1 Super mini package for easy mounting.
1 2 +0.
1 0.
95-0.
1 +0.
1 1.
9-0.
1 +0.
1 1.
3-0.
1 Excellent linearity nof DC forward current gain.
High collector current.
High gain band width product.
0.
55 0.
4 3 +0.
05 0.
1-0.
01 +0.
1 0.
97-0.
1 1.
Base 2.
Emitter 3.
collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector dissipation (Ta=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICM IC PC Tj Tstg Rating -25 -20 -4 -1 -700 150 125 -55 to +125 Unit V V V A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain ( * ) Collector-emitter saturation voltage Gain band width product * It shows hFE classification in right table.
Symbol Testconditons Min -25 -20 -4 -1 -1 150 -0.
2 180 800 -0.
5 V MHz Typ Max Unit V V V ìA ìA V (BR) CBO IC = -10 ìA, IE = 0 V (BR) CEO IC = -100 ìA,RBE = V (BR) EBO IE = -10 ìA, IC = 0 ICBO IEBO hFE VCE fT VCB = -25 V, IE = 0 VEB = -2 V, IC = 0 VCE = -4 V, IC = -100 mA IC = -500 mA, IB = -25 mA VCE = -6 V, IE = 10 mA hFE Classification Marking hFE AE 150 300 AF 250 500 AG 400 800 +0.
1 0.
38-0.
1 0-0.
1 www.
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com.
cn 1 Free Datasheet http://www.
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