DatasheetsPDF.com

2SC3680

Part Number	2SC3680
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 25, 2013
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Swi...
Datasheet	2SC3680 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.
5 A 120 W 150 ℃ Tstg S...

Similar Datasheet

2SC3600 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC3601 PNP / NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR - NEC
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR - NEC
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR - New Jersey Semi-Conductor
2SC3605 Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
2SC3606 Silicon NPN Transistor - Toshiba Semiconductor
2SC3606 NPN Transistors - Kexin
2SC3607 Silicon NPN Transistor - Toshiba Semiconductor
2SC3608 Transistor - ETC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)