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2SC3692

Part Number	2SC3692
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 25, 2013
Detailed Description	isc Silicon NPN Power Transistor 2SC3692 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 6A ·...
Datasheet	2SC3692 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3692 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.
5V(Max)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.
5 A 30 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3692 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V...

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