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2SB975

Part Number	2SB975
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Darlington Power Transistor
Published	Oct 25, 2013
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB975 DESCRIPTION ·High DC Current Gain- : hFE =...
Datasheet	2SB975 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB975 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.
5V(Max)@ IC= -3A ·Complement to Type 2SD1309 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Cur...

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