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2SB941

Part Number	2SB941
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 25, 2013
Detailed Description	isc Silicon PNP Power Transistor 2SB941 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.2V(Max)@IC= -3A ...
Datasheet	2SB941 PDF File

Overview

isc Silicon PNP Power Transistor 2SB941 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.
2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 2 W 35 150 ℃ Tstg...

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