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2SB930

Part Number	2SB930
Manufacturer	TY Semiconductor
Description	Transistor
Published	Oct 25, 2013
Detailed Description	Product specification 2SB930 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15...
Datasheet	2SB930 PDF File

Overview

Product specification 2SB930 TO-252 +0.
15 1.
50 -0.
15 Unit: mm 2.
30 +0.
8 0.
50-0.
7 +0.
1 -0.
1 6.
50 +0.
2 5.
30-0.
2 +0.
15 -0.
15 Features High forward current transfer ratio hFE which has satisfactory linearity.
+0.
2 9.
70 -0.
2 +0.
1 0.
80-0.
1 +0.
15 0.
50 -0.
15 0.
127 max 2.
3 +0.
15 4.
60-0.
15 +0.
1 0.
60-0.
1 +0.
28 1.
50 -0.
1 +0.
25 2.
65 -0.
1 +0.
15 5.
55 -0.
15 Low collector-emitter saturation voltage VCE(sat).
1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -60 -5 -4 -8 1.
3 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Collector cutoff curent Emitter-base cutoff current Forward current transfer ratio Base to emitter voltage Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO ICES ICEO IEBO hFE VBE Testconditons IC = -30 mA, IB = 0 VCE = -60 V,VBE = 0 VCE = -30 V,IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -3 A VCE = -4 V, IC = -3 A 70 15 -2 -1.
5 20 0.
2 IC = -4 A,IB1 = -0.
4 A,IB2 = 0.
4 A, VCC = -50 V 0.
5 0.
2 V V MHz ìs ìs ìs Min -60 -400 -700 -1 250 Typ Max Unit V ìA ìA mA VCE(sat) IC = -4 A, IB = -0.
4 A fT ton tstg tf VCE = -10 V, IC = -0.
5 A , f = 10 MHz hFE Classification Rank hFE Q 70 150 P 120 250 3 .
8 0 http://www.
twtysemi.
com sales@twtysemi.
com 4008-318-123 1 of 1 Free Datasheet http://www.
datasheet4u.
com/ ...

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