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2SD1619

Part Number	2SD1619
Manufacturer	SeCoS
Description	PNP Silicon Medium Power Transistor
Published	Oct 25, 2013
Detailed Description	2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 ...
Datasheet	2SD1619 PDF File

Overview

2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.
BASE Collector current 2.
COLLECTOR A ICM : -1 3.
EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.
900 0.
900 Min 1.
400 0.
320 0.
360 0.
350 4.
400 1.
400 2.
300 3.
940 1.
500TYP 3.
100 1.
100 Max 1.
600 0.
520 0.
560 0.
440 4.
600 1.
800 2.
600 4.
250 Min Dimensions In Inches Max 0.
063 0.
020 0.
022 0.
017 0.
181 0.
071 0.
102 0.
167 0.
060TYP 0.
114 0.
035 0.
122 0.
043 0.
055 0.
013 0.
014 0.
014 0.
173 0.
055 0.
091 0.
155 ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅CLASSIFICATION OF hFE(1) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-of...

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