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AP9998GS-HF

Advanced Power Electronics
Part Number AP9998GS-HF
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 26, 2013
Detailed Description AP9998GS-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Single Drive Requirement ▼ Fast...
Datasheet PDF File AP9998GS-HF PDF File

AP9998GS-HF
AP9998GS-HF

Overview
AP9998GS-HF Halogen-Free Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 25mΩ 44A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial surface mount applications and suited for switching power applications.
GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 44 28 160 104 3.
13 -55 to 150 -55 to 150 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.
2 40 Units ℃/W ℃/W 1 201105091 Data and specifications subject to change without notice Free Datasheet http://www.
datasheet4u.
com/ AP9998GS-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=24A VDS=VGS, ID=250uA VDS=10V, ID=24A VDS=80V, VGS=0V VGS=+20V, VDS=0V ID=24A VDS=80V V...


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