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SI3407DV

Vishay
Part Number SI3407DV
Manufacturer Vishay
Description P-Channel MOSFET
Published Oct 26, 2013
Detailed Description New Product Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.0240 at ...
Datasheet PDF File SI3407DV PDF File

SI3407DV
SI3407DV

Overview
New Product Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.
0240 at VGS = - 4.
5 V 0.
0372 at VGS = - 2.
5 V ID (A) - 8.
0a - 8.
0 a FEATURES Qg (Typ.
) 21 nC • • • • TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS • Load Switch - Notebook PC - Portable Devices TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code (3) G 07 XXX Lot Traceability and Date Code Part # Code (1, 2, 5, 6) D P-Channel MOSFET 3 4 2.
85 mm Ordering Information: Si3407DV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.
1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit - 20 ± 12 - 8.
0a - 8.
0a - 7.
5b, c - 6.
0...


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