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PBSS5112PAP

NXP
Part Number PBSS5112PAP
Manufacturer NXP
Description PNP/PNP low VCEsat (BISS) transistor
Published Oct 29, 2013
Detailed Description PBSS5112PAP 30 November 2012 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. Product profile 1....
Datasheet PDF File PBSS5112PAP PDF File

PBSS5112PAP
PBSS5112PAP

Overview
PBSS5112PAP 30 November 2012 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1.
Product profile 1.
1 General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP.
NPN/NPN complement: PBSS4112PAN.
1.
2 Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 1.
3 Applications • Load switch • ...


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