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2SB139100MA

Part Number	2SB139100MA
Manufacturer	Silan Microelectronics
Description	LOW IR SCHOTTKY BARRIER DIODE
Published	Oct 29, 2013
Detailed Description	2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB139100MA is a schottky barrier diode chip...
Datasheet	2SB139100MA PDF File

Overview

2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB139100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.
002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 1390µm X 1390µm; Chip Thickness: 280±20µm; Product Name 2SB139100MAYY Specification For Axial leads package Chip Topography and Dimensions La: Chip Size: 1.
390mm; Lb: Pad Size: 1.
295mm; ORDERING SPECIFICATIONS Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.
3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 3 80 150 -40~150 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 ) Parameters Reverse Voltage Forward Voltage Reverse Current Symbol VBR VF IR Test Conditions IR=0.
5mA IF=3A VR=100V Min.
100 --Max.
-0.
85 0.
5 Unit V V mA HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http: www.
silan.
com.
cn REV:1.
0 2007.
04.
27 Page 1 of 1 Free Datasheet http://www.
datasheet4u.
com/ La fabricated in silicon epitaxial planar technology; ...

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2SB139100MA LOW IR SCHOTTKY BARRIER DIODE - Silan Microelectronics

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