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2SB1578

NEC
Part Number 2SB1578
Manufacturer NEC
Description PNP SILICON EPITAXIAL TRANSISTOR
Published Oct 29, 2013
Detailed Description DATA SHEET SILICON TRANSISTOR 2SB1578 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEE...
Datasheet PDF File 2SB1578 PDF File

2SB1578
2SB1578

Overview
DATA SHEET SILICON TRANSISTOR 2SB1578 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1578 features high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers.
PACKAGE DRAWING (UNIT: mm) FEATURES • New package with dimensions in between those of small signal and power signal package • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SD2425 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.
C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
Electrode connection 1: Emitter 2: Collector 3: Base ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg 7.
5 cm2 × 0.
7 mm ceramic board used PW ≤ 10 ms, duty cycle ≤ 50 % Conditions Ratings −60 −60 −6.
0 −5.
0 −7.
0 −1.
0 2.
0 150 −55 to +150 Unit V V V A A A W °C °C The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D16147EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 Free Datasheet http://www.
datasheet4u.
com/ 2SB1578 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) ton tstg tf Conditions VCB = −50...


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