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2SC2736

Inchange Semiconductor
Part Number 2SC2736
Manufacturer Inchange Semiconductor
Description Silicon NPN RF Transistor
Published Oct 29, 2013
Detailed Description isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2736 DESCRIPTION ·Silicon NPN epitaxial type ·Local oscillator wi...
Datasheet PDF File 2SC2736 PDF File

2SC2736
2SC2736

Overview
isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2736 DESCRIPTION ·Silicon NPN epitaxial type ·Local oscillator wide band amplifier ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF/VHF frequency converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.
15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor INCHANGE Semiconductor 2SC2736 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA ICBO Collector Cutoff Current VCB= ...


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