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AON6204

Alpha & Omega Semiconductors
Part Number AON6204
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6204 30V N-Channel MOSFET General Description The AON6204 uses trench MOSFET technology that is uniquely optimized t...
Datasheet PDF File AON6204 PDF File

AON6204
AON6204


Overview
AON6204 30V N-Channel MOSFET General Description The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.
In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 30V 24A < 12mΩ < 18mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.
1mH C TC=25° C Power Dissipation B Power Dissipation A C TC=100° TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 30 ±20 24 19 110 14 11 21 22 31 13 1.
9 1.
2 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 29 56 3.
3 Max 35 67 4 Units ° C/W ° C/W ° C/W Rev 1 : March 2011 www.
aosmd.
com Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ AON6204 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.
4 110 10 14.
5 14.
5 33 0.
72 1 30 400 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 150 13 0.
8 6 VGS=10V, VDS=15V, ID=20A 2.
6 1.
6 0.
8 VGS=10V, VDS=15V, RL=0.
75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 8 13 510 220 ...



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