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AON6912A

Alpha & Omega Semiconductors
Part Number AON6912A
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Oct 31, 2013
Detailed Description AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description The AON6912A is designed to provide a high efficiency...
Datasheet PDF File AON6912A PDF File

AON6912A
AON6912A

Overview
AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization.
It includes two specialized MOSFETs in a dual Power DFN5x6 package.
The Q1 "High Side" MOSFET is designed to minimize switching losses.
The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses.
The AON6912A is well suited for use in compact DC/DC converter applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 100% UIS Tested 100% Rg Tested Q1 30V 34A <13.
7mΩ <19.
3mΩ Q2 30V 52A <7.
3mΩ <10.
4mΩ DFN5X6 Top View Bottom View PIN1 Top View Bottom View Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Max Q1 30 ±20 34 21 85 10 8 22 24 22 9 1.
9 1.
2 -55 to 150 Max Q2 Units V V VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG TC=25° C 52 33 130 13.
8 10.
8 28 80 30 12 2.
1 1.
3 A A mJ W W ° C A Avalanche Energy L=0.
1mH C Power Dissipation B TC=100° C TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ Q1 29 56 4.
5 Typ Q2 24 50 3.
5 Max Q1 Max Q2 35 29 67 60 5.
5 4.
2 Units ° C/W ° C/W ° C/W Rev1: Mar.
2011 www.
aosmd.
com Page 1 of 10 Free Datasheet http://www.
datasheet4u.
com/ AON6912A Q1 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, I...


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