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2SD1044

Part Number	2SD1044
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Darlington Power Transistor
Published	Oct 31, 2013
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 700(Min.)@ IC= 1A, VCE= 4V ·High C...
Datasheet	2SD1044 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 700(Min.
)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperat...

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