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TK20X60U

Toshiba
Part Number TK20X60U
Manufacturer Toshiba
Description Field Effect Transistor
Published Nov 3, 2013
Detailed Description TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK20X60U Switching Regulator Applications ...
Datasheet PDF File TK20X60U PDF File

TK20X60U
TK20X60U

Overview
TK20X60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK20X60U Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.
175 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 150 144 15 15 150 −55 to 150 Unit V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2...


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