MITSUBISHI
PM150RLA120
FLAT-BASE TYPE INSULATED PACKAGE
PM150RLA120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1. 9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) Current rating of brake part increased. 50% for the current rating of inverter part. • 3φ 150A, 1200V Current-sense IGBT type inverter • 75A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic • Detection, protection & status indication circuit...
PM150RLA120 PDF File
