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TC3889

Part Number	TC3889
Manufacturer	Transcom
Description	5W Packaged Self-Bias PHEMT GaAs Power FETs
Published	Nov 9, 2013
Detailed Description	TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • • • • • • • • 5W Typical O...
Datasheet	TC3889 PDF File

Overview

TC3889 PRE.
2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • • • • • • • • 5W Typical Output Power 12dB Typical Linear Power Gain at 2.
0GHz High Linearity: IP3 = 47 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 18V Wg = 12 mm 100 % DC Tested Suitable for High Reliability Application The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is designed to provide the single power supply application.
The flange ceramic package provides excellent thermal conductivity for the GaAs FET.
The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application.
All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.
0 GHz) Symbol P1dB GL IP3 PAE IDS BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10 V Linear Power...

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