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UPD5758T6J

Part Number	UPD5758T6J
Manufacturer	Renesas
Description	Low Noise and High Gain Amplifier
Published	Nov 10, 2013
Detailed Description	Preliminary Data Sheet μPD5758T6J Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTIO...
Datasheet	UPD5758T6J PDF File

Overview

Preliminary Data Sheet μPD5758T6J Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTION R09DS0017EJ0100 Rev.
1.
00 Apr 18, 2011 The μPD5758T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.
This device exhibits low noise and high voltage gain characteristics.
The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.
FEATURES • Low noise • • • • • • : NV = −101 dBV TYP.
@VDD = 1.
5 V, Cin = 3 pF, RL = 2.
2 kΩ : NV = −102 dBV TYP.
@VDD = 1.
5 V, Cin = 5 pF, RL = 2.
2 kΩ High gain : GV = +5.
7 dB TYP.
@VDD = 1.
5 V, Cin = 3 pF, RL = 2.
2 kΩ : GV = +7.
7 dB TYP.
@VDD = 1.
5 V, Cin = 5 pF, RL = 2.
2 kΩ Low input capacitance : Cinput = 1.
5 pF TYP.
@VDD = 1.
5 V, RL = 2.
2 kΩ Low consumption current : IDD = 190 μA TYP.
@VDD = 1.
5 V, RL = 2.
2 kΩ High-density surface mounting : 3-pin thin-type lead-less minimold (1.
2 × 1.
0 × 0.
33 mm) Built-in the capacitor f...

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UPD5758T6J Low Noise and High Gain Amplifier - Renesas

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