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PBSS5130QA

NXP
Part Number PBSS5130QA
Manufacturer NXP
Description PNP low VCEsat (BISS) transistor
Published Nov 11, 2013
Detailed Description DF N1 01 PBSS5130QA 28 August 2013 0D -3 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 1. General d...
Datasheet PDF File PBSS5130QA PDF File

PBSS5130QA
PBSS5130QA

Overview
DF N1 01 PBSS5130QA 28 August 2013 0D -3 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 1.
General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN complement: PBSS4130QA.
2.
Features and benefits • • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified 3.
Applications • • • • • Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.
g.
motors, fans) 4.
Quick reference data Table 1.
Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resi...


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