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PMXB56EN

NXP
Part Number PMXB56EN
Manufacturer NXP
Description N-channel Trench MOSFET
Published Nov 11, 2013
Detailed Description DFN1010D-3 PMXB56EN 30 V, N-channel Trench MOSFET 11 January 2017 Product data sheet 1. General description N-channel...
Datasheet PDF File PMXB56EN PDF File

PMXB56EN
PMXB56EN


Overview
DFN1010D-3 PMXB56EN 30 V, N-channel Trench MOSFET 11 January 2017 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Leadless ultra small and thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Exposed drain pad for excellent thermal conduction • Very low Drain-Source on-state resistance RDSon = 49 mΩ • Very fast switching 3.
Applications • Low-side load switch and charging switch for portable devices • Power management in battery-driven portables • LED driver • DC-to-DC converters 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 3.
2 A; Tj = ...



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