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RN2907AFS

Toshiba
Part Number RN2907AFS
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Nov 11, 2013
Detailed Description RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)...
Datasheet PDF File RN2907AFS PDF File

RN2907AFS
RN2907AFS

Overview
RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2907AFS, RN2908AFS, RN2909AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.
0±0.
05 0.
1±0.
05 0.
8±0.
05 0.
1±0.
05 0.
15±0.
05 4 Q2 3 Unit: mm • • 0.
35 0.
35 1.
0±0.
05 Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly costs.
0.
7±0.
05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package.
1 2 3 6 5 4 0.
1±0.
05 • Complementary to the RN1907AFS to RN1909AFS +0.
02 -0.
04 C 0.
48 Equivalent Circuit and Bias Resistor Values Type No.
RN2907AFS RN2908AFS RN2909AFS E R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 B R1 R2 fS6 JEDEC JEITA TOSHIBA 1.
EMITTER1 2.
BASE1 3.
COLLECTOR2 4.
EMITTER2 5.
BASE2 6.
COLLECTOR1 (E1) (B1) (C2) (E2) (B2) (C1) ― ― 2-1F1D Weight: 1 mg (typ.
) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristic Collector-base voltage Collector-emitter voltage RN2907AFS to RN2909AFS RN2907AFS Emitter-base voltage RN2908AFS RN2909AFS Collector current Collector power dissipation Junction temperature Storage temperature range RN2907AFS to RN2909AFS IC PC (Note 1) Tj Tstg VEBO Symbol VCBO VCEO Rating −50 −50 −6 −7 −15 −80 50 150 −55 to 150 mA mW °C °C 1 2 V Q1 Unit V V 6 5 Equivalent Circuit (top view) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test rep...


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