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RN2910

Toshiba
Part Number RN2910
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Nov 11, 2013
Detailed Description RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2910,RN2911 Switching, Inverter Circuit, In...
Datasheet PDF File RN2910 PDF File

RN2910
RN2910

Overview
RN2910,RN2911 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2910,RN2911 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1910, RN1911 Unit: mm Equivalent Circuit Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC P C* Tj Tstg Rating −50 −50 −5 −100 200 ...


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