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RN2963FE

Toshiba
Part Number RN2963FE
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Nov 11, 2013
Detailed Description RN2961FE~RN2966FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN296...
Datasheet PDF File RN2963FE PDF File

RN2963FE
RN2963FE

Overview
RN2961FE~RN2966FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2961FE,RN2962FE,RN2963FE RN2964FE,RN2965FE,RN2966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost.
• Complementary to RN1961FE~RN1966FE Unit: mm Equivalent Circuit and Bias Resistor Values C Type No.
RN2961FE RN2962FE R2 RN2963FE RN2964FE E RN2965FE RN2966FE R1 (kΩ) 4.
7 10 22 47 2.
2 4.
7 R2 (kΩ) 4.
7 10 22 47 47 47 B R1 JEDEC JEITA TOSHIBA ― ― 2-2N1A Weight: 0.
003 g (typ.
) Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature r...


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