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TJ15S06M3L

Toshiba
Part Number TJ15S06M3L
Manufacturer Toshiba
Description P-Channel MOSFET
Published Nov 11, 2013
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TJ15S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Swit...
Datasheet PDF File TJ15S06M3L PDF File

TJ15S06M3L
TJ15S06M3L

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TJ15S06M3L 1.
Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 38.
5 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit TJ15S06M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2011-03 2020-06-24 Rev.
8.
0 TJ15S06M3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -15 A Drain current (pulsed) (Note 1) IDP -30 Power dissipation (Tc = 25) PD 41 W Single-pulse avalanche energy (Note 2) EAS 29 mJ Avalanche current IAR -15 A Channel temperature (Note 3) Tch 175  Storage temperature (Note 3) Tstg -55 to 175 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 3.
6 /W Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: VDD = -25 V, Tch = 25 (initial), L = 173 µH, RG = 25 Ω, IAR = -15 A Note 3: The definitions of the absolu...


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