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TJ60S06M3L

Toshiba
Part Number TJ60S06M3L
Manufacturer Toshiba
Description P-Channel MOSFET
Published Nov 11, 2013
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Swit...
Datasheet PDF File TJ60S06M3L PDF File

TJ60S06M3L
TJ60S06M3L

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S06M3L 1.
Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.
6 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA) 3.
Packaging and Internal Circuit TJ60S06M3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-03 1 2014-11-26 Rev.
5.
0 TJ60S06M3L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -60 A Drain current (pulsed) (Note 1) IDP -120 Power dissipation (Tc = 25) PD 100 W Single-pulse avalanche energy (Note 2) EAS 132 mJ Avalanche current IAR -60 A Channel temperature (Note 3) Tch 175  Sto...


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