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TK100A10N1

Toshiba
Part Number TK100A10N1
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 11, 2013
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low d...
Datasheet PDF File TK100A10N1 PDF File

TK100A10N1
TK100A10N1


Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK100A10N1 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 3.
1 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit TK100A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1,2) ID 207 A Drain current (DC) (Tc = 25) (Note 1) ID 100 Drain current (pulsed) (t = 1 ms) (Note 1) IDP 362 Power dissipation (Tc = 25) PD 45 W Single-pulse avalanche energy (Note 3) EAS 222 mJ Avalanche current IAR 100 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2012-01 1 2014-01-28 Rev.
3.
0 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Limited by silicon chip capability.
Package limit is 100 A.
Note 3: VDD = 80 V, Tch = 25 (initial), L = 17.
1 µH, IAR = 100 A TK100A10N1 Symbol Rth(ch-c) Rth(ch-a) Max Unit 2.
77 /W 62.
5 Note...


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