DatasheetsPDF.com

TK80E06K3A

Toshiba
Part Number TK80E06K3A
Manufacturer Toshiba
Description Silicon N-channel MOS
Published Nov 11, 2013
Detailed Description TK80E06K3A MOSFETs Silicon N-channel MOS (U-MOS ) TK80E06K3A 1. Applications • Switching Voltage Regulators 2. Featur...
Datasheet PDF File TK80E06K3A PDF File

TK80E06K3A
TK80E06K3A

Overview
TK80E06K3A MOSFETs Silicon N-channel MOS (U-MOS ) TK80E06K3A 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.
8 mΩ (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)