Part Number | TK80F06K3L |
Manufacturer | Toshiba |
Description | Silicon N-channel MOS |
Features | (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max)... |
Published | Nov 11, 2013 |
Datasheet | TK80F06K3L PDF File |