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TK80F08K3

Toshiba
Part Number TK80F08K3
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 11, 2013
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS) TK80F08K3 1. Applications • Switching Voltage Regulators 2. Features (1) AEC-Q101...
Datasheet PDF File TK80F08K3 PDF File

TK80F08K3
TK80F08K3

Overview
MOSFETs Silicon N-channel MOS (U-MOS) TK80F08K3 1.
Applications • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 3.
4 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK80F08K3 TO-220SM(W) 1: Gate 2: Drain (Heatsink) 3: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2012-06 2020-06-12 Rev.
2.
0 TK80F08K3 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 75 V ...


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