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TPC6109-H

Toshiba
Part Number TPC6109-H
Manufacturer Toshiba
Description P-Channel MOSFET
Published Nov 11, 2013
Detailed Description TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficie...
Datasheet PDF File TPC6109-H PDF File

TPC6109-H
TPC6109-H

Overview
TPC6109-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6109-H High-Efficiency DC-DC Converter Applications • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.
) (VDS = −10 V) High forward transfer admittance: |Yfs| = 8.
0 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 2a) (Note 2b) (Note 3) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −30 −30 ±20 −5 −20 2.
2 0.
7 16.
3 −5 0.
055 150 −55 to150 Unit V V V A 1.
Drain 2.
Drain 3.
Gate 4.
Source 5.
Drain 6.
Drain JEDEC JEITA ⎯ ⎯ 2-3T1A Drain power dissipation (t = 5 s) Drain power dissipation (t = 5 s) Single-pulse avalanche energy Avalanche current Rep...


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