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TPC8053-H

Toshiba
Part Number TPC8053-H
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 11, 2013
Detailed Description TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8053-H Switching Regulator Applicati...
Datasheet PDF File TPC8053-H PDF File

TPC8053-H
TPC8053-H

Overview
TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8053-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.
7 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 14.
1 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 30 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
2 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS I...


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