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TPC8125

Toshiba
Part Number TPC8125
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Nov 11, 2013
Detailed Description TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8125 Lithium Ion Battery Applications Po...
Datasheet PDF File TPC8125 PDF File

TPC8125
TPC8125

Overview
TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.
) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −0.
5mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse a...


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