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TPC8A03-H

Toshiba
Part Number TPC8A03-H
Manufacturer Toshiba
Description Field Effect Transistor
Published Nov 11, 2013
Detailed Description TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) T...
Datasheet PDF File TPC8A03-H PDF File

TPC8A03-H
TPC8A03-H

Overview
TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A03-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Built-in schottky barrier diode Low forward voltage: VDSF = −0.
6 V (max) High-speed switching Small gate charge: QSW = 8.
4 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 4.
1 mΩ (typ.
) High forward transfer admittance: |Yfs| = 54 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate vo...


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