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TPCA8A04-H

Toshiba
Part Number TPCA8A04-H
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Nov 11, 2013
Detailed Description TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) ...
Datasheet PDF File TPCA8A04-H PDF File

TPCA8A04-H
TPCA8A04-H

Overview
TPCA8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPCA8A04-H 0.
5 ± 0.
1 High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Built-in a schottky barrier diode 6.
0 ± 0.
3 Unit: mm 0.
4 ± 0.
1 5 8 1.
27 0.
05 M A 5.
0 ± 0.
2 Low forward voltage: VDSF = −0.
6 V (max) High-speed switching Small gate charge: QSW = 13.
4 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 2.
3 mΩ (typ.
) High forward transfer admittance: |Yfs| = 127 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1 mA) 0.
15 ± 0.
05 0.
...


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