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TPCA8A10-H

Toshiba
Part Number TPCA8A10-H
Manufacturer Toshiba
Description Field Effect Transistor
Published Nov 11, 2013
Detailed Description TPCA8A10-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A10-H 1. Applications • • • High-Effici...
Datasheet PDF File TPCA8A10-H PDF File

TPCA8A10-H
TPCA8A10-H

Overview
TPCA8A10-H MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode) TPCA8A10-H 1.
Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2.
Features (1) (2) (3) (4) (5) (6) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.
6 V (max) High-speed switching Small gate charge: QSW = 12 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 2.
9 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2011-06-19 Rev.
1.
0 Free Datasheet http://www.
datasheet4u.
com/ TPCA8A10-H 4.
...


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