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TPCC8061-H

Toshiba
Part Number TPCC8061-H
Manufacturer Toshiba
Description Field Effect Transistor
Published Nov 11, 2013
Detailed Description TPCC8061-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCC8061-H 1. Applications • • • High-Efficiency DC-DC Converters N...
Datasheet PDF File TPCC8061-H PDF File

TPCC8061-H
TPCC8061-H

Overview
TPCC8061-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCC8061-H 1.
Applications • • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2.
Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.
5 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
1 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 1 2011-06-06 Rev.
2.
0 Free Datasheet http://www.
datasheet4u.
com/ TPCC8061-H 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) (Note 4) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD PD PD EAS IAR Tch Tstg Rating 30 ±20 8 24 15 1.
9 0.
7 41 8 150 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max 8.
33 65.
7 178 Unit...


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