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TPH4R008NH

Toshiba
Part Number TPH4R008NH
Manufacturer Toshiba
Description Field Effect Transistor
Published Nov 11, 2013
Detailed Description TPH4R008NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R008NH 1. Applications • • • DC-DC Converters Switching Voltage...
Datasheet PDF File TPH4R008NH PDF File

TPH4R008NH
TPH4R008NH

Overview
TPH4R008NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R008NH 1.
Applications • • • DC-DC Converters Switching Voltage Regulators Motor Drivers 2.
Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 18 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 3.
3 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1 2012-07-21 Rev.
1.
0 Free Datasheet http://www.
datasheet4u.
com/ TPH4R008NH 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Silicon limit) (Tc = 25) (t = 1 ms) (Tc = 25) (t = 10 s) (t = 10 s) (Note 3) (Note 4) (Note 5) (Note 1), (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID ID IDP PD PD PD EAS IAR Tch Tstg Rating 80 ±20 100 60 200 78 2.
8 1.
6 340 60 150 -55 to 150 W W W mJ A  A Unit V Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25) (t = 10 s) (t = ...


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