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TPN2R203NC

Toshiba
Part Number TPN2R203NC
Manufacturer Toshiba
Description Field Effect Transistor
Published Nov 11, 2013
Detailed Description TPN2R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN2R203NC 1. Applications • Power Management Switches 2. Features (...
Datasheet PDF File TPN2R203NC PDF File

TPN2R203NC
TPN2R203NC

Overview
TPN2R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN2R203NC 1.
Applications • Power Management Switches 2.
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.
8 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
5 mA) 3.
Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche curre...


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