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VSLB9530S

Vishay
Part Number VSLB9530S
Manufacturer Vishay
Description High Speed Infrared Emitting Diode
Published Nov 11, 2013
Detailed Description VSLB9530S www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Pack...
Datasheet PDF File VSLB9530S PDF File

VSLB9530S
VSLB9530S

Overview
VSLB9530S www.
vishay.
com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: TELUX • Dimensions (L x W x H in mm): 7.
62 x 7.
62 x 4.
6 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity, vertical: ϕv = ± 18° • Angle of half intensity, horizontal: ϕh = ± 36° 19232 • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz DESCRIPTION VSLB59530S, is an infrared, 940 nm emitting diode in GaAlAs multi-quantum well (MQW) technology with high radiant power and high speed.
It is molded in a clear high power...


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