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2SK3606-01

Fuji Electric
Part Number 2SK3606-01
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Nov 12, 2013
Detailed Description 2SK3606-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary bre...
Datasheet PDF File 2SK3606-01 PDF File

2SK3606-01
2SK3606-01

Overview
2SK3606-01 FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 200 170 ±18 ±72 ±30 18 125.
5 20 5 2.
02 105 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=620µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < =150°C < < < *5 V GS =-30V *3 IF < -I D , -di/dt=50A/µs, Vcc BV DSS , Tch 150°C *4 V DS 200V = = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=±30V VDS=0V ID=6.
5A VGS=10V ID=6.
5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=6.
5A VGS=10V RGS=10 Ω V CC =100V ID=13A VGS=10V L=620µH Tch=25°C IF=13A VGS=0V Tch=25°C IF=13A VGS=0V -di/dt=100A/µs Tch=25°...


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