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2SK3684-01L

Fuji Electric
Part Number 2SK3684-01L
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Nov 12, 2013
Detailed Description 2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Fea...
Datasheet PDF File 2SK3684-01L PDF File

2SK3684-01L
2SK3684-01L

Overview
2SK3684-01L,S,SJ FUJI POWER MOSFET 200309 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max.
power dissipation Operating and storage temperature range Symbol Ratings V DS 500 VDSX 500 ID ±19 ID(puls] ±76 VGS ±30 IAS 19 EAS dV DS/dt dV/dt PD Tch Tstg 245.
3 20 5 1.
67 270 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/µs W °C °C Remarks VGS=-30V Tch< =150°C L=1.
25mH VCC =50V *2 VDS< =500V *3 Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *2 See to Avalanche Energy Graph *3 IF < = 150°C = -ID, -di/dt=50A/µs, VCC < = BVDSS, Tch < Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=9.
5A VGS=10V ID=9.
5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=9.
5A VGS=10V RGS=10 Ω V CC =250V ID=19A VGS=10V L=1.
25mH Tch=25°C IF=19A VGS=0V Tch=25°C IF=19A VGS=0V -di/dt=100A/µs Tch=25°C ...


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