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2SK3650-01L

Fuji Electric
Part Number 2SK3650-01L
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Nov 12, 2013
Detailed Description 2SK3650-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Feat...
Datasheet PDF File 2SK3650-01L PDF File

2SK3650-01L
2SK3650-01L

Overview
2SK3650-01L,S,SJ FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max.
power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 150 120 ±33 ±132 ±30 33 169 20 5 1.
67 150 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph < DSS, Tch=150°C < *4 VDS < *3 IF< =-ID, -di/dt=50A/µs, Vcc=BV =150V < *2 Tch=150°C *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=150V VGS=0V Tch=25°C Tch=125°C VDS=120V VGS=0V VGS=±30V VDS=0V ID=11.
5A VGS=10V ID=11.
5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=11.
5A VGS=10V RGS=10 Ω V CC =48V ID=23A VGS=10V L=228µH Tch=25°C IF=23A VGS=0V Tch=25°C IF=23A VGS=0V -di/dt=100A/µs Tch=...


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