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AF4811P

Anachip
Part Number AF4811P
Manufacturer Anachip
Description P-Channel 30-V (D-S) MOSFET
Published Nov 14, 2013
Detailed Description AF4811P P-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature...
Datasheet PDF File AF4811P PDF File

AF4811P
AF4811P

Overview
AF4811P P-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack applications General Description These miniature surface mount MOSFETs utilize High Cell Density process.
Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.
Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
Product Summary VDS (V) -30 rDS(on) (mΩ) 30@VGS=-10V 52@VGS=-4.
5V ID (A) 9.
5 7.
5 Pin Assignments S S S G 1 2 3 4 8 7 6 5 Pin Descriptions D D D D Pin Name S G D Description Source Gate Drain SOP-8 Ordering information A X Feature F :MOSFET PN 4811P X X X Package S: SOP-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube or Bulk A : Tape & Reel This datasheet contains new product information.
Anachip Corp.
reserves the rights to modify the product specification without notice.
No liability is assumed as a result of the use of this product.
No rights under any patent accompany the sale of the product.
Rev.
1.
0 Jul 16, 2004 1/3 Free Datasheet http://www.
datasheet4u.
com/ AF4811P P-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TA=25ºC TA=70ºC Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction) (Note 1) TA=25ºC Power Dissipation (Note 1) TA=70ºC Operating Junction and Storage Temperature Range Rating -30 ±25 9.
5 8.
3 ±50 -2.
1 3.
1 2.
6 -55 to 150 Units V V A A A W ºC Thermal Resistance Ratings Symbol RθJC RθJA Parameter Maximum Junction-to-Case (Note 1) Maximum Junction-to-Ambient (...


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