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2N4410

Fairchild Semiconductor
Part Number 2N4410
Manufacturer Fairchild Semiconductor
Description NPN General Purpose Amplifier
Published Mar 23, 2005
Detailed Description 2N4410 Discrete POWER & Signal Technologies 2N4410 C BE TO-92 NPN General Purpose Amplifier This device is designe...
Datasheet PDF File 2N4410 PDF File

2N4410
2N4410

Overview
2N4410 Discrete POWER & Signal Technologies 2N4410 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA.
Sourced from Process 16.
See 2N5551 for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 80 120 5.
0 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N4410 625 5.
0 83.
3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N4410 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.
0 mA, I B = 0 I C = 500 µA, VBB = 5.
0 V RBE = 8.
2 kΩ I C = 10 µ A, IE = 0 I E = 10 µA, I C = 0 VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 100 ° C VEB = 4.
0 V, IC = 0 80 120 120 5.
0 10 1.
0 100 V V V V nA µA nA ON CHARACTERISTICS* hFE VCE( sat) VBE( sat) VBE( on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base...


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