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UT4232

UTC
Part Number UT4232
Manufacturer UTC
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Nov 16, 2013
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION T...
Datasheet PDF File UT4232 PDF File

UT4232
UT4232

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UT4232 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UT4232 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and to be operated with low gate voltages.
This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever.
„ FEATURES * VDS(V)=30V * ID=7A (VGS = 10V) * RDS(ON)<22mΩ@VGS=10V * RDS(ON)<32mΩ@VGS=4.
5V * Halogen Free „ SYMBOL „ ORDERING INFORMATION Ordering Number UT4232G-S08-R Package SOP-8 Packing Tape Reel www.
unisonic.
com.
tw Copyright © 2009 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R502-337.
a Free Datasheet http://www.
datasheet4u.
com/ UT4232 „ PIN CONFIGURATION Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 4 QW-R502-337.
a Free Datasheet http://www.
datasheet4u.
com/ UT4232 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Ta=25°C)(Note 2) ID 7.
8 A Pulsed Drain Current (Note 3) IDM 30 A Power Dissipation (Ta=25°C) 2 W PD Derate above Ta>25°C 0.
016 W/°C Junction Temperature TJ +150 °C Junction and Storage Temperature Range TSTG -55 ~ +150 °C Note: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min 3.
Pulse width limited by TJ(MAX) „ THERMAL DATA UNIT °C/W PARAMETER SYMBOL MIN TYP MAX Junction to Ambient θJA 62.
5 Note: Surface mounted on 1 in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on min „ ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) SYMBOL BVDSS TEST CONDITIONS VGS=0 V, ID=250 µA MIN 30 0.
02 1 ±100 1 3 22 32 720 230 200 10 7 22 8 13 3 9 1150 TYP MAX UNIT V V/°C µA nA V mΩ mΩ pF pF pF ns ns...


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